| PART |
Description |
Maker |
| BAW56W Q62702-A1031 |
Silicon Switching Diode Array (For high speed switching applications Common anode)
From old datasheet system
|
Siemens Semiconductor G...
SIEMENS AG
Siemens Group
Siemens Semiconductor Group
Infineon
|
| 2SJ506 2SJ506L 2SJ506S |
Silicon P Channel MOS FET High Speed Power Switching
Silicon P Channel MOS FET High Speed Power Switching 硅P通道MOS FET的高速电源开
Power switching MOSFET
|
Renesas Electronics, Corp.
HITACHI[Hitachi Semiconductor]
|
| IKP20N65F5 |
high power thyristor diode
650V DuoPack IGBT and Diode High speed switching series fifth generation
|
Infineon Technologies AG
Infineon Technologies A...
|
| 2SC3811 |
Silicon NPN epitaxial planer type(For high speed switching)
Transistor
|
Matsshita / Panasonic
PANASONIC[Panasonic Semiconductor]
|
| H5N2003P-15 |
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| 2SJ189 2SJ189TP-FA |
Very High-Speed Switching Applications
4 A, 30 V, 0.17 ohm, P-CHANNEL, Si, POWER, MOSFET
|
SANYO[Sanyo Semicon Device]
Sanyo Electric Co., Ltd.
|
| DB2U30800L |
For high speed switching circuits DB27308 in USSMini2 type package
|
Panasonic Semiconductor
|
| 2SJ527 2SJ527L 2SJ527S |
Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
| H7N0307LD-15 |
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK60S2DPP-E0 RJK60S2DPP-E0T2 |
600V - 10A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| CPD83V-1N4148 |
High Speed Switching Diode Die 0.15 Amp, 100 Volt
|
Central Semiconductor C...
|
| H5N2005DL-15 |
200V - 6A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
